Dummy Die Placement Without Backside Chipping

ABSTRACT

A method includes bonding a second package component to a first package component, bonding a third package component to the first package component, attaching a dummy die to the first package component, encapsulating the second package component, the third package component, and the dummy die in an encapsulant, and performing a planarization process to level a top surface of the second package component with a top surface of the encapsulant. After the planarization process, an upper portion of the encapsulant overlaps the dummy die. The dummy die is sawed-through to separate the dummy die into a first dummy die portion and a second dummy die portion. The upper portion of the encapsulant is also sawed through.

BACKGROUND

Since the development of the integrated circuit (IC), the semiconductorindustry has experienced continued rapid growth due to continuousimprovements in the integration density of various electronic components(i.e., transistors, diodes, resistors, capacitors, etc.). For the mostpart, these improvements in integration density have come from repeatedreductions in minimum feature size, which allows more components to beintegrated into a given area.

These integration improvements are essentially two-dimensional (2D) innature, in that the area occupied by the integrated components isessentially on the surface of the semiconductor wafer. The increaseddensity and corresponding decrease in area of the integrated circuit hasgenerally surpassed the ability to bond an integrated circuit chipdirectly onto a substrate. Interposers have been used to redistributeball contact areas from that of the chip to a larger area of theinterposer. Further, interposers have allowed for a three-dimensional(3D) package that includes multiple chips. Other packages have also beendeveloped to incorporate 3D aspects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1-5, 6A, 6B, 6C, 6D, 6E, 6F, and 7-14 are cross-sectional viewsand plan views in an example process of forming a package structure inaccordance with some embodiments.

FIGS. 15 through 19 are cross-sectional views and plan views in anexample process of forming a package structure in accordance with someembodiments.

FIGS. 20A through 20F illustrate plan views of package structures inaccordance with some embodiments.

FIGS. 21A through 21F illustrate plan views of package structures inaccordance with some embodiments.

FIGS. 22A through 22D illustrate plan views of package structures inaccordance with some embodiments.

FIG. 23 illustrates a process flow for forming a package structure inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “underlying,” “below,”“lower,” “overlying,” “upper” and the like, may be used herein for easeof description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

A package structure including dummy dies and the method of forming thesame are provided in accordance with various embodiments. Theintermediate stages in the formation of the package structure areillustrated in accordance with some embodiments. Some variations of someembodiments are discussed. Throughout the various views and illustrativeembodiments, like reference numbers are used to designate like elements.In accordance with some embodiments of the present disclosure, a packagestructure including dummy dies are placed adjacent the active dies toreduce the warpage of the package structure. This reduction of thewarpage of the package structure enables a more reliable packagestructure by reducing the likelihood of cold joints between the activedies and the interposer. In accordance with some embodiments, the dummydies are placed along the periphery of the package structure, such as inor near the scribe line regions. Accordingly, the dummy dies are sawedthrough when the package structure is singulated. A layer of moldingcompound is left overlapping the dummy dies to prevent the chipping ofthe dummy dies in the singulation.

Embodiments will be described with respect to a specific context, namelya Die-Interposer-Substrate stacked package usingChip-on-Wafer-on-Substrate (CoWoS) processing. Other embodiments mayalso be applied, however, to other packages, such as a Die-Die-Substratestacked package, and other processing. Embodiments discussed herein areto provide examples to enable making or using the subject matter of thisdisclosure, and a person having ordinary skill in the art will readilyunderstand modifications that can be made while remaining withincontemplated scopes of different embodiments. Although methodembodiments may be discussed as being performed in a particular order,other method embodiments may be performed in any logical order.

FIGS. 1-5, 6A, 6B, 6C, 6D, 6E, 6F, and 7-14 illustrate thecross-sectional views and plane views (such as top views) ofintermediate stages in the formation of a package structure inaccordance with some embodiments of the present disclosure. Thecorresponding processes are also reflected schematically in the processflow shown in FIG. 23.

FIG. 1 illustrates the formation of wafer 10, which includes packagecomponents 28 (FIG. 2) in accordance with some embodiments. Packagecomponents 28 may be device dies, packages, or the like. A packagecomponent 28 may comprise any number of dies, substrates, transistors,active devices, passive devices, or the like. In an embodiment, packagecomponent 28 may include substrate 20, which may be a bulk semiconductorsubstrate, a semiconductor-on-insulator (SOI) substrate, a multi-layeredsemiconductor substrate, or the like. The semiconductor substrate isformed of a semiconductor material, which may be silicon, germanium, acompound semiconductor including silicon germanium, silicon carbide,gallium arsenic, gallium phosphide, indium phosphide, indium arsenide,and/or indium antimonide; an alloy semiconductor including SiGe, GaAsP,AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof.Other substrates, such as multi-layered or gradient substrates, may alsobe used. Substrate 20 may be doped or undoped. Devices, such astransistors, capacitors, resistors, diodes, and the like, may be formedin and/or on an active surface 22 of semiconductor substrate 20.

A package component 28 may include interconnect structure 24, whichincludes one or more dielectric layer(s) and respective metallizationpattern(s) formed on the active surface 22. The metallization pattern(s)in the dielectric layer(s) may route electrical signals between thedevices, such as by using vias and/or traces, and may also containvarious electrical devices, such as capacitors, resistors, inductors, orthe like. The various devices and metallization patterns may beinterconnected to perform one or more functions. The functions mayinclude memory structures, processing structures, sensors, amplifiers,power distribution, input/output circuitry, or the like. Additionally,electrical connectors 26, such as conductive pillars (for example,comprising a metal such as copper), are formed in and/or on theinterconnect structure 24 to provide an external electrical connectionto the circuitry and devices. In accordance with some embodiments, theelectrical connectors 26 protrude from the interconnect structure 24 toform pillar structures.

In accordance with some embodiments of the present disclosure, aplurality of inter-metallization dielectric (IMD) layers may be formedin the interconnect structure 24. An IMD layer may be formed, forexample, of a low-K dielectric material, such as phosphosilicate glass(PSG), borophosphosilicate glass (BPSG), fluorosilicate glass (FSG),SiO_(x)C_(y), Spin-On-Glass, Spin-On-Polymers, silicon carbon material,compounds thereof, composites thereof, combinations thereof, or thelike, by any suitable method known in the art, such as spinning,chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD),high-density plasma chemical vapor deposition (HDP-CVD), or the like. Ametallization pattern may be formed in the IMD layer, for example, byusing photolithography techniques to deposit and pattern a photoresistmaterial on the IMD layer to expose portions of the IMD layer that areto become the metallization pattern. An etch process, such as ananisotropic dry etch process, may be used to create recesses and/oropenings in the IMD layer corresponding to the exposed portions of theIMD layer. The recesses and/or openings may be lined with a diffusionbarrier layer and filled with a conductive material. The diffusionbarrier layer may comprise one or more layers of tantalum nitride,tantalum, titanium nitride, titanium, cobalt tungsten, the like, or acombination thereof, deposited by atomic layer deposition (ALD), or thelike. The conductive material of the metallization patterns may comprisecopper, aluminum, tungsten, silver, and combinations thereof, or thelike, deposited by CVD, physical vapor deposition (PVD), or the like.Any excessive diffusion barrier layer and/or conductive material on theIMD layer may be removed, such as by using a chemical mechanical polish(CMP) process.

In FIG. 2, wafer 10 is singulated into individual package components 28.Typically, package components 28 contain the same circuitry, such asdevices and metallization patterns, although the dies may have differentcircuitry. The singulation may be through blade sawing, laser dicing, orthe like.

Each of package components 28 may include one or more logic dies (e.g.,central processing unit, graphics processing unit, field-programmablegate array (FPGA), system-on-chip (SOC) dies, microcontroller, or thelike), memory dies (e.g., dynamic random access memory (DRAM) die,static random access memory (SRAM) die, or the like), power managementdies (e.g., power management integrated circuit (PMIC) die), radiofrequency (RF) dies, sensor dies, micro-electro-mechanical-system (MEMS)dies, signal processing dies (e.g., digital signal processing (DSP)die), front-end dies (e.g., analog front-end (AFE) dies), the like, or acombination thereof.

FIGS. 3-5 and 7-14 illustrate the cross-sectional views of intermediatestages in the packaging of package components and dummy dies, which arebonded to other package components. The respective processes are shownas process flow 400 as shown in FIG. 23. In FIGS. 3-5 and 7-14,interposers are used as an example of the package components 36, onwhich other package components are bonded thereon. It is appreciatedthat other types of package components such as package substrates (coredor coreless), packages, or the like, may also be used as packagecomponents 36.

FIG. 3 illustrates package component 32 in accordance with someembodiments, which comprises one or more components 36 duringprocessing. Package component 32 may be an interposer wafer, which isfree from active devices (such as transistors and diodes) and passivedevices (such as resistors, capacitors, inductors, or the like) therein.Package component 32 may also be a device wafer including active and/orpassive devices. The substrate 34 may be a semiconductor substrate or adielectric substrate. When being a semiconductor substrate, substrate 34may be a bulk semiconductor substrate, a silicon-on-insulator (SOI)substrate, a multi-layered semiconductor substrate, or the like. Thesemiconductor material of the substrate 34 may be silicon, germanium, acompound semiconductor including silicon germanium, silicon carbide,gallium arsenic, gallium phosphide, indium phosphide, indium arsenide,and/or indium antimonide; an alloy semiconductor including SiGe, GaAsP,AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof.Other substrates, such as multi-layered or gradient substrates, may alsobe used. The substrate 34 may be doped or undoped. Package component 32may also be a package substrate, which may include a core or may be acore-less substrate.

Through-vias (TVs) 38 are formed to extend from a first surface 37 ofsubstrate 34 into substrate 34. The TVs 38 are also sometimes referredto as through-substrate vias or through-silicon vias when substrate 34is a silicon substrate. The TVs 38 may be formed by forming recesses inthe substrate 34 by, for example, etching, milling, laser techniques, acombination thereof, and/or the like. A thin dielectric material may beformed in the recesses, such as by using an oxidation process or aconformal deposition process. A thin barrier layer may be conformallydeposited over the front side of the substrate 34 and in the openings,such as by CVD, ALD, PVD, thermal oxidation, a combination thereof,and/or the like. A conductive material may be deposited over the thinbarrier layer and in the openings. The conductive material may be formedby an electro-chemical plating process, CVD, ALD, PVD, a combinationthereof, and/or the like. Examples of conductive materials are copper,tungsten, aluminum, silver, gold, a combination thereof, and/or thelike. Excess portions of conductive material and barrier layer areremoved from the front side of the substrate 34 by, for example, CMP.Thus, the TVs 38 may comprise a conductive material and a thin barrierlayer between the conductive material and the substrate 34.

Redistribution structure 40 is formed over the first surface 37 of thesubstrate 34, and is used to electrically connect the integrated circuitdevices, if any, and/or TVs 38 together and/or to external devices. Theredistribution structure 40 may include one or more dielectric layer(s)and respective metallization pattern(s) in the dielectric layer(s). Themetallization patterns may comprise vias and/or traces to interconnectany devices and/or TVs 38 together and/or to an external device. Themetallization patterns are sometimes referred to as Redistribution Lines(RDLs). The dielectric layers may comprise silicon oxide, siliconnitride, silicon carbide, silicon oxynitride, low-K dielectric material,such as PSG, BPSG, FSG, SiO_(x)C_(y), Spin-On-Glass, Spin-On-Polymers,silicon carbon material, compounds thereof, composites thereof,combinations thereof, or the like. The dielectric layers may bedeposited by any suitable method known in the art, such as spin-oncoating, CVD, PECVD, HDP-CVD, or the like. A metallization pattern maybe formed in the dielectric layer, for example, by usingphotolithography techniques to deposit and pattern a photoresistmaterial on the dielectric layer to expose portions of the dielectriclayer that are to become the metallization pattern. An etch process,such as an anisotropic dry etch process, may be used to create recessesand/or openings in the dielectric layer corresponding to the exposedportions of the dielectric layer. The recesses and/or openings may belined with a diffusion barrier layer and filled with a conductivematerial. The diffusion barrier layer may comprise one or more layers ofTaN, Ta, TiN, Ti, CoW, or the like, deposited by ALD, or the like, andthe conductive material may comprise copper, aluminum, tungsten, silver,and combinations thereof, or the like, deposited by CVD, PVC, or thelike. Any excessive diffusion barrier layer and/or conductive materialon the dielectric layer may be removed, for example, by using a CMPprocess.

Electrical connectors 41/42 are formed at the top surface of theredistribution structure 40 on conductive pads. In accordance with someembodiments, the conductive pads include under-bump-metallurgies (UBMs).In the illustrated embodiment, the pads are formed in openings of thedielectric layers of the redistribution structure 40. In anotherembodiment, the pads (UBMs) can extend through an opening of adielectric layer of the redistribution structure 40 and also extendacross the top surface of the redistribution structure 40.

In accordance with some embodiments, the electrical connectors 41/42include a metal pillar 41 with a metal cap layer 42, which may be asolder cap, over the metal pillar 41. The electrical connectors 41/42including the pillars 41 and the cap layers 42 are sometimes referred toas micro bumps 41/42. In accordance with some embodiments, the metalpillars 41 include a conductive material such as copper, aluminum, gold,nickel, palladium, the like, or a combination thereof and may be formedby sputtering, printing, electro plating, electroless plating, CVD, orthe like. The metal pillars 41 may be solder-free and have substantiallyvertical sidewalls. In accordance with some embodiments, a metal caplayer 42 is formed on the top of the metal pillar 41. The metal caplayer 42 may include nickel, tin, tin-lead, gold, copper, silver,palladium, indium, nickel-palladium-gold, nickel-gold, the like, or acombination thereof and may be formed by a plating process.

In FIG. 4, package components 28 and 44 are bonded to a first side ofthe components 36, for example, through flip-chip bonding by way of theelectrical connectors 41/42 and the metal pillars 43 on the packagecomponents 28/44 to form conductive joints 39. The respective process isillustrated as process 402 in the process flow 400 shown in FIG. 23. Themetal pillars 43 may be similar to the metal pillars 41 and thedescription is not repeated herein. The package components 28 and thepackage component 44 may be placed on the electrical connectors 41/42using, for example, a pick-and-place tool.

The package component 44 may be formed through similar processing asdescribed above in reference to package components 28. In accordancewith some embodiments, the package component 44 include one or morememory dies, such as a stack of memory dies (e.g., DRAM dies, SRAM dies,High-Bandwidth Memory (HBM) dies, Hybrid Memory Cubes (HMC) dies,low-power (LP) double data rate (DDR) memory modules, or the like). Inthe stack of memory dies embodiments, a package component 44 can includeboth memory dies and a memory controller, such as, for example, a stackof four or eight memory dies with a memory controller. Also, inaccordance with some embodiments, the package component 44 may bedifferent sizes (e.g., different heights and/or surface areas), and inother embodiments, the package component 44 may be the same size (e.g.,same heights and/or surface areas).

In accordance with some embodiments, the package component 44 may havesimilar heights as those of package components 28 (as shown in FIG. 4)or in accordance with some embodiments, package components 28 and 44 maybe of different heights.

A package component 44 includes a main body 46, an interconnectstructure 48, and electrical connectors 50. The main body 46 of thepackage component 44 may comprise any number of dies, substrates,transistors, active devices, passive devices, or the like. In anembodiment, the main body 46 may include a bulk semiconductor substrate,semiconductor-on-insulator (SOI) substrate, multi-layered semiconductorsubstrate, or the like. The semiconductor material of the main body 46may be selected from the similar candidate materials and structure ofsubstrate 20. Devices, such as transistors, capacitors, resistors,diodes, and the like, may be formed in and/or on an active surface.

An interconnect structure 48 comprising one or more dielectric layer(s)and respective metallization pattern(s) is formed on the active surfaceof the package component 44. The metallization pattern(s) in thedielectric layer(s) may route electrical signals between the devices,such as by using vias and/or traces, and may also contain variouselectrical devices, such as capacitors, resistors, inductors, or thelike. The various devices and metallization patterns may beinterconnected to perform electrical functions. Additionally, electricalconnectors 50, such as conductive pillars (for example, comprising ametal such as copper), are formed in and/or on the interconnectstructure 48 to provide an external electrical connection to thecircuitry and devices. In accordance with some embodiments, theelectrical connectors 50 protrude from the interconnect structure 48 toform pillar structure to be utilized when bonding the package component44 to other structures. One of ordinary skill in the art will appreciatethat the above examples are provided for illustrative purposes. Othercircuitry may be used as appropriate for a given application.

The conductive joints 39 electrically couple the circuits in packagecomponents 28 and 44 through interconnect structures 48 and 24 andelectrical connectors 50 and 26, respectively, to TVs 38 in components36.

The bonding between package components 28 and 44 and the components 36may be solder bonding or direct metal-to-metal (such as acopper-to-copper) bonding. In an embodiment, package components 28 andpackage component 44 are bonded to components 36 through a reflowprocess. During this reflow process, the electrical connectors 41/42/43are in contact with the electrical connectors 26 and 50, respectively,and the pads of the redistribution structure 40 to physically andelectrically couple the package components 28 and the package component44 to the package components 36.

In FIG. 4 and subsequent figures, a first package region 45A and asecond package region 45B for the formation of a first package and asecond package, respectively, are illustrated. Scribe line regions 47are between adjacent package regions. As illustrated in FIG. 4, a firstdie 28 and multiple second dies 44 are attached in each of the firstpackage region 45A and the second package region 45B.

In FIG. 5, an underfill material 52 is dispensed into the gaps betweenpackage components 28/44, and the corresponding underlying portions ofredistribution structure 40. The respective process is illustrated asprocess 404 in the process flow 400 shown in FIG. 23. The underfillmaterial 52 may extend up along the sidewalls of package components 28and the package component 44. The underfill material 52 may be anyacceptable material, such as a polymer, epoxy, molding underfill, or thelike. The underfill material 52 may be formed by a capillary flowprocess after package components 28 and 44 are attached.

FIGS. 6A, 6B, 6C, 6D, 6E, and 6F illustrate plan views of packagestructures including dummy dies 54 being adhered to the components 36.FIG. 7 is a cross-sectional view illustrating the dummy dies 54 in thepackage structure. FIG. 7 is along the line A-A of plan view FIG. 6C.The dummy dies 54 can be placed on the components 36 by using, forexample, a pick-and-place tool. In FIGS. 6A, 6B, 6C, 6D, 6E, and 6F,“HBM” and “SOC” are marked as example package components 44 and 28,respectively. It is appreciated that package components 44 and 28 may beany other types of devices whenever applicable.

In FIG. 6A, the dummy dies 54 are attached in the scribe line regions 47and have lengthwise directions extending along the scribe line regions47 that are along a first direction (e.g. vertical direction of FIG.6A). In FIG. 6B, the dummy dies 54 are attached between adjacent packagecomponent 44 of the same region 45A and/or 45B. In FIG. 6C, the dummydies 54 are attached in the scribe line regions 47 and extend along thescribe line regions 47 that are along a first direction and seconddirection (e.g. both vertical and horizontal directions of FIG. 6C) andalso interposed between adjacent package component 44 of the same region45A and/or 45B.

In FIG. 6D, the dummy dies 54 are attached between adjacent packagecomponent 44 of the same region 45A and/or 45B and are not in the scribeline regions 47 but are near the scribe line regions 47. In FIG. 6E, theconfiguration of dummy dies 54 is similar to the configuration of FIG.6D, except that dummy dies 54 are also attached near the corners of theregions 45A and/or 45B adjacent the package component 44. Again, in thisembodiment, the dummy dies 54 are not in the scribe line regions 47 butare near the scribe line regions 47. In FIG. 6F, the dummy dies 54 areattached near the corners of the regions 45A and/or 45B adjacent thepackage component 44 and are not in the scribe line regions 47 but arenear the scribe line regions 47.

The dummy dies 54 being placed in or near the scribe line regions 47 canhelp to prevent warpage during and after singulation (see FIG. 13) ofthe packages in the first and second package regions 45A and 45B. Asignificant part of the warpage occur due to that there is a space 49(FIG. 6A) between package components 44 and 28, in which moldingcompound will be filled. A dummy dies 54 (for example, FIG. 6A) includesa first portion in the space 49, and second portions on opposite sidesof the first portion. Dummy dies 54 are rigid to prevent the warpage.For example, the embodiment of FIG. 6C (and singulated package in FIG.15C discussed later) can reduce the warpage of the package by up toabout 60% as compared to a package without any dummy dies 54.

One way the dummy dies 54 can help to reduce warpage is to providesupport to the package during the actual singulation process. Anotherway that the dummy dies 54 can prevent warpage is to reduce thecoefficient of thermal expansion (CTE) mismatch between the components36 and the subsequently formed encapsulant 58 (see FIG. 8) as the dummydies 54 have a similar CTE to the components 36 and they reduce theamount of encapsulant 58 necessary in the package.

Referring to FIG. 7, dummy dies 54 are adhered in the scribe lineregions 47 adjacent the package component 44. The respective process isillustrated as process 406 in the process flow 400 shown in FIG. 23. Thedummy dies 54 are attached to the components 36 with attachingstructures 56. In accordance with some embodiments, the attachingstructures 56 are adhesives that adhere the dummy dies 54 to thecorresponding components 36. In accordance with some embodiments, theattaching structure 56 includes one or more metal pillars with metal caplayers (sometimes referred to as micro bumps) that bond the dummy dies54 to the components. The dummy dies 54 may be made of silicon, adielectric material, the like, or a combination thereof. In accordancewith some embodiments, the dummy dies 54 are blank dies, with theentirety formed of a homogenous material such as silicon. No activedevices, passive devices, metal features, or the like are formed indummy dies 54 in accordance with some embodiments. Dummy dies 54 do nothave electrical functions. In accordance with some embodiments, thedummy dies 54 are defective active dies that have been recycled as dummydies 54. In accordance with some embodiments, the top surfaces of thedummy dies 54 are lower than the back sides of either one or both ofpackage components 28 and 44.

In the adhesive attaching structure 56 embodiments, the adhesive 56 ison bottom surfaces of the dummy dies 54 and adheres the dummy dies 54 tothe components 36, such as the redistribution structure 40 in theillustration. The adhesive 56 may be any suitable adhesive, epoxy, dieattach film (DAF), or the like. The adhesive 56 may be applied to abottom surface of the dummy dies 54 or may be applied over the surfaceof the redistribution structure 40. The dummy dies 54 may be adhered tothe redistribution structure 40 by the adhesive 56 using, for example, apick-and-place tool. Underfill 52 is disposed, and is then cured, eitherbefore or after the dummy dies 54 are adhered.

In the micro bump attaching structure 56 embodiments, the micro bumps 56are formed on bottom surfaces of the dummy dies 54, the top surfaces ofthe components 36, or both. The micro bumps 56 can be formed at a sametime as micro bumps (e.g. electrical connectors 41/42) that bond packagecomponents 28 and 44. The micro bumps 56 bond the dummy dies 54 to thecomponents 36, such as the redistribution structure 40 in theillustration. The micro bumps 56 of the dummy dies 54 can be reflowedtogether with the electrical connectors 41/42/43 of package components28 and 44.

In FIG. 8, an encapsulant 58 is disposed/molded to encapsulate packagecomponents 28 and 44 and dummy dies 54 therein. The respective processis illustrated as process 408 in the process flow 400 shown in FIG. 23.The encapsulant 58 may be a molding compound, epoxy, or the like, andmay be applied by compression molding, transfer molding, or the like.Encapsulant 58 and underfill 52 may be formed of different materials. Acuring process is performed to cure the encapsulant 58, such as athermal curing, an Ultra-Violet (UV) curing, or the like. In accordancewith some embodiments, the package components 28, the package component44, and the dummy dies 54 are buried in the encapsulant 58. After thecuring of the encapsulant 58, a planarization process such as a ChemicalMechanical Polish (CMP) process or a mechanical grinding process may beperformed to remove excess portions of the encapsulant 58, which excessportions are over top surfaces of package components 28 and/or packagecomponent 44. The respective process is illustrated as process 410 inthe process flow 400 shown in FIG. 23. Accordingly, the top surfaces ofpackage components 28 and/or package components 44 are exposed, and arelevel with a top surface of the encapsulant 58.

In accordance with some embodiments of the present disclosure, the topsurfaces of dummy dies 54 are lower than the top surface of encapsulant58. Accordingly, portions 58A of encapsulant 58 cover dummy dies 54. Thethickness T4 of portions 58A is great enough to provide adequateprotection to dummy dies 54 from the undesirably chipping in thesubsequent singulation process as shown in FIG. 13. Otherwise, ifthickness T4 is too small, in the subsequent singulation process,portions 58A may chip or peel from dummy dies 54. Thickness T4 alsocannot be too big either. Otherwise, dummy dies 54 will be thin, andtheir ability to prevent the warpage of the resulting package iscompromised. In accordance with some embodiments, thickness T4 isgreater than about 5 μm, and may be in the range between about 5 μm andabout 600 μm.

FIGS. 9 through 12 illustrate the formation of the structure on thesecond side of components 36. The respective process is illustrated asprocess 412 in the process flow 400 shown in FIG. 23. In FIG. 9, thestructure of FIG. 8 is flipped over to prepare for the formation of thesecond side of components 36. Although not shown, the structure may beplaced on a carrier or a support structure (not shown) for the processesof FIGS. 9 through 12. As shown in FIG. 9, at this stage of processing,the substrate 34 and redistribution structure 40 of the components 36have a combined thickness T1 in a range between about 50 μm and about415 μm, such as about 415 μm. The dummy dies 54 (including attachingstructure 56) have a thickness T2 in a range from about 30 μm to about415 μm, such as about 400 μm.

In FIG. 10, a thinning process is performed on the second side of thesubstrate 34 to thin the substrate 34 to a second surface 60 until TVs38 are exposed. The thinning process may include an etch-back process, agrinding process, the like, or a combination thereof. In accordance withsome embodiments, after the thinning process, the substrate 34 andredistribution structure 40 of the components 36 have a combinedthickness T3 in a range between about 30 μm and about 200 μm, such asabout 52 μm.

In FIG. 11, a redistribution structure is formed on the second surface60 of the substrate 34, and is used to electrically connect the TVs 38together and/or to external devices. The redistribution structureincludes one or more dielectric layers 62 and metallization patterns 64in the one or more dielectric layers 62. The metallization patterns maycomprise vias and/or traces to interconnect TVs 38 together and/or to anexternal device. The metallization patterns 64 are sometimes referred toas Redistribution Lines (RDLs). The dielectric layers 62 may comprisesilicon oxide, silicon nitride, silicon carbide, silicon oxynitride,low-K dielectric material, such as PSG, BPSG, FSG, SiO_(x)C_(y),Spin-On-Glass, Spin-On-Polymers, silicon carbon material, compoundsthereof, composites thereof, combinations thereof, or the like. Thedielectric layers 62 may be deposited by any suitable method known inthe art, such as spinning, CVD, PECVD, HDP-CVD, or the like. Themetallization patterns 64 may be formed in the dielectric layer 62, forexample, by using damascene processes.

In FIG. 12, electrical connectors 66 are also formed the metallizationpatterns 64 and are electrically coupled to TVs 38. The electricalconnectors 66 are formed at the top surface of the redistributionstructure on the metallization patterns 64. In accordance with someembodiments, the metallization patterns 64 include UBMs. In theillustrated embodiment, the pads are formed in openings of thedielectric layers 62 of the redistribution structure. In anotherembodiment, the pads (UBMs) can extend through an opening of adielectric layer 62 of the redistribution structure and also extendacross the top surface of the redistribution structure.

In accordance with some embodiments, the electrical connectors 66 aresolder balls and/or metal bumps, such as ball grid array (BGA) balls, C4micro bumps, ENIG formed bumps, ENEPIG formed bumps, or the like. Theelectrical connectors 66 may include a conductive material such assolder, copper, aluminum, gold, nickel, silver, palladium, tin, thelike, or a combination thereof. In another embodiment, the electricalconnectors 66 are metal pillars (such as a copper pillar) formed by asputtering, printing, electro plating, electroless plating, CVD, or thelike. The metal pillars may be solder free and have substantiallyvertical sidewalls. In accordance with some embodiments, a metal caplayer (not shown) is formed on the top of the metal pillar connectors66. The metal cap layer may include nickel, tin, tin-lead, gold, silver,palladium, indium, nickel-palladium-gold, nickel-gold, the like, or acombination thereof and may be formed by a plating process.

The electrical connectors 66 may be used to bond to an additionalelectrical component, which may be a semiconductor substrate, a packagesubstrate, a Printed Circuit Board (PCB), or the like (see 300 in FIG.14).

In FIG. 13, components 36 and dummy dies 54 are singulated betweenadjacent regions 45A and 45B along scribe line regions 47 to formcomponent packages 200. The respective process is illustrated as process414 in the process flow 400 shown in FIG. 23. Each component package 200comprises, among other features, package component 28, package component36, package component 44, and remaining portions 54′ of the dummy dies54. The singulation may be by sawing, dicing, or the like, and may beperformed using a blade. Each of dummy dies 54 may have portions 54′left on opposite sides of the respective kerf. As discussed above, theremaining dummy die portions 54′ help to reduce the stress and warpagecaused during and after the singulation process. Encapsulant portion58A, which covers dummy die 54, prevents dummy die 54 from chippingduring the singulation process. Otherwise, if portion 58A is not formed,dummy die 54 may chip due to the mechanical force of the dicing blade.

After the singulation process, the remaining portions 54′ of the dummydies 54 have sidewall surfaces that are coterminous with (flush with)the lateral extents of the component package 200 (see, e.g., FIGS. 13and 14).

FIG. 14 illustrates the attachment of a component package 200 on apackage component 300 to form package 302. Electrical connectors 66 arealigned to, and are put against, bond pads of the package component 300.The electrical connectors 66 may be reflowed to create a bond betweenthe package component 300 and the component 36. The package component300 may comprise a package substrate, such as a build-up substrateincluding a core therein, a laminate substrate including a plurality oflaminated dielectric films, a printed circuit board (PCB), or the like.The package component 300 may comprise electrical connectors (notshown), such as solder balls, opposite the component package to allowthe package component 300 to be mounted to another device. An underfillmaterial (not shown) can be dispensed between the component package 200and the package component 300 and surrounding the electrical connectors66. The underfill material may be any acceptable material, such as apolymer, epoxy, molding underfill, or the like.

FIGS. 15 through 19 illustrate the plane view and cross-sectional viewsof intermediate stages in the formation of a package structure inaccordance with some embodiments of the present disclosure. Unlessspecified otherwise, the materials and the formation processes of thecomponents in these embodiments are essentially the same as the likecomponents, which are denoted by like reference numerals in theembodiments shown in FIGS. 1-5, 6A, 6B, 6C, 6D, 6E, 6F, and 7-14. Thedetails regarding the formation processes and the materials of thecomponents shown in FIGS. 15 through 19 may thus be found in thediscussion of the embodiment shown in FIGS. 1-5, 6A, 6B, 6C, 6D, 6E, 6F,and 7-14. The initial steps of these embodiments are essentially thesame as shown in FIGS. 1-5, 6A, 6B, 6C, 6D, 6E, and 6F.

FIG. 15 illustrates a plane view of dummy die 54 in accordance with someembodiments. Dummy die 54 includes portion 54B, and portions 54A onopposite sides of dummy die portion 54B. Dummy die portions 54A arethicker than portion 54B, hence forming recess 55 over dummy die portion54B, as shown in FIG. 16. For example, as shown in FIG. 16, dummy dieportions 54A have thickness T5, and dummy die portion 54B has thicknessT6 smaller than thickness T5, resulting in recess 55 extending intodummy die 54. In accordance with some embodiments, the difference(T5-T6) is greater than about 5 μm, and may be in the range betweenabout 5 μm and about 600 μm. Width W1 (FIG. 15) of portion 54B isgreater than the kerf of the singulation process (FIG. 13) with adequateprocess margin. Furthermore, width W1 is large enough, so that there areremaining portions 54B left on opposite sides of the kerf after thesingulation. Width W1 may be greater than about 30 μm, and may be in therange between about 50 μm and about 1,000 μm.

Referring to FIG. 16, dummy dies 54 are attached to package component32. In accordance with some embodiments, dummy die portion 54B is in themiddle of scribe line 47, and one of dummy die portion 54A is betweendummy die portion 54B and region 45A, and the other one of dummy dieportion 54A is between dummy die portion 54B and region 45B.

FIG. 17 further illustrates the encapsulation with encapsulant 58. Inaccordance with some embodiments, encapsulant 58 is disposed into thegaps between package components 28 and 44 and dummy die 54. Also,encapsulant 58 is disposed into recesses 55 in dummy dies 54. Aplanarization process is then performed to remove excess encapsulant 58.After the planarization, encapsulant portions 58B of encapsulant 58remain in recesses 55, and have thickness T4, which may be greater thanabout 5 μm, and may be in the range between about 5 μm and about 600 μm.

In subsequent processes, the processes shown in FIGS. 9 through 12 areperformed on the structure shown in FIG. 17, the resulting structure isshown in FIG. 18. The process details are similar to what are shown inFIGS. 9 through 12, and hence are not repeated herein. In the resultingpackage 200, a dummy die portion 54B has a sidewall exposed. Also,encapsulant portion 58B extends from an edge of dummy die portion 54B tothe edge of package 200, and encapsulant portion 58B covers (with thestructure viewed upside down) dummy die portion 54B. In the singulationprocess to form packages 200, encapsulant portion 58B prevents thechipping of dummy die 54. The width W2 of portion 58B cannot be toosmall. Otherwise, encapsulant portion 58B peels from dummy die 54. Inaccordance with some embodiments, width W2 is greater than about 50 μm,and may be in the range between about 60 μm and about 500 μm. FIG. 19illustrates the bonding of package 200 to package component 300 to formpackage 302.

FIGS. 20A, 20B, 20C, 20D, 20E, and 20F illustrate plan views of thepackage structures 302 corresponding to each of the dummy die 54embodiments shown in FIGS. 6A, 6B, 6C, 6D, 6E, and 6F, respectively.These embodiments are symmetrical with package components 28 havingpackage component 44 and dummy dies 54 on opposite sides of packagecomponents 28.

FIGS. 21A, 21B, 21C, 21D, 21E, and 21F illustrate plan views of asingulated package structure in other embodiments in each of the dummydie 54 embodiments shown in FIGS. 6A, 6B, 6C, 6D, 6E, and 6F,respectively. In these embodiments, the singulated package structuresare asymmetric as the package component 44 and the dummy dies 54 areonly on one side (e.g. top side of plan view in FIGS. 21A, 21B, 21C,21D, 21E, and 21F) of the die 28. These package structures can bemanufactured using similar materials, structures, and processes as thosedescribed above in FIGS. 1 through 5 and 7 through 14, and thedescription is not repeated herein

FIGS. 22A, 22B, and 22C illustrate plan views at a similar point ofprocessing and similar in dummy die 54 configurations as FIGS. 6A, 6B,and 6C, respectively, except that in these embodiments, there are morepackage component 44 in each of the package structures. These packagestructures can be manufactured using similar materials, structures, andprocesses as those described above in FIGS. 1 through 5 and 7 through14, and the description is not repeated herein.

FIG. 22D illustrates a plan view of another embodiment of a dummy die 54configuration similar to those in FIGS. 22A-22C, except that in thisembodiment, the dummy dies 54 are within the regions 45A and 45B and arenot in the scribe line regions 47. These package structures can bemanufactured using similar materials, structures, and processes as thosedescribed above in FIGS. 1 through 5 and 7 through 14, and thedescription is not repeated herein. This type of configuration (e.g. nodummy dies 54 in the scribe line regions 47) can also be applied to anyof the prior configurations described above.

It is appreciated that the encapsulant portions 58A (FIG. 14) orencapsulant portions 58B (FIG. 19) may exist for each of the packagesformed based on FIGS. 6A, 6B, 6C, 6D, and 6D, and in each of thepackages shown in FIGS. 20A, 20B, 20C, 20D, 20E, and 20F, FIGS. 21A,21B, 21C, 21D, 21E, and 21F, and FIGS. 22A, 22B, 22C, and 22D.

In above-illustrated embodiments, some processes and features arediscussed in accordance with some embodiments of the present disclosure.Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

The embodiments of the present disclosure have some advantageousfeatures. The dummy die(s) adjacent the active dies can help to reducethe warpage of the corresponding package structure. This reduction ofthe warpage of the package structure enables a more reliable packagestructure. With some portions of encapsulant left on top of the dummydies, the undesirable chipping of the dummy dies is prevented.

In accordance with some embodiments of the present disclosure, a methodcomprises bonding a second package component to a first packagecomponent; bonding a third package component to the first packagecomponent; attaching a dummy die to the first package component;encapsulating the second package component, the third package component,and the dummy die in an encapsulant; performing a planarization processto level a top surface of the second package component with a topsurface of the encapsulant, wherein after the planarization process, anupper portion of the encapsulant overlaps the dummy die; andsawing-through the dummy die to separate the dummy die into a firstdummy die portion and a second dummy die portion, wherein the upperportion of the encapsulant is sawed through. In an embodiment, the upperportion of the encapsulant has a thickness greater than about 5 μm. Inan embodiment, the second package component and the third packagecomponent are spaced apart from each other by a space, and wherein thedummy die comprises: a first portion in the space; and second portionson opposite sides of the space. In an embodiment, at a time the dummydie is sawed through, an entirety of the dummy die is covered by theencapsulant. In an embodiment, at a time the dummy die is sawed through,the dummy die comprises a first top surface that is exposed, and asecond top surface covered by the upper portion of the encapsulant. Inan embodiment, the dummy die comprises silicon. In an embodiment, theplanarization process is performed until the third package component isfurther revealed.

In accordance with some embodiments of the present disclosure, a methodcomprises bonding a first package component to a second packagecomponent, wherein the first package component comprises a device die;attaching a dummy die to the second package component, wherein the dummydie comprises a recess; encapsulating the first package component andthe dummy die in an encapsulant, wherein the encapsulant comprises aportion filling the recess; and performing a singulation process using ablade to form a package, wherein the package comprises the first packagecomponent, a portion of the second package component, and a portion ofthe dummy die, and wherein the blade cuts through the portion of theencapsulant in the recess. In an embodiment, the portion of theencapsulant in the recess is cut into two portions. In an embodiment,the recess is elongated with a lengthwise direction, and the blade cutsalong the lengthwise direction. In an embodiment, the method furthercomprises, after the encapsulating and before the singulation process,performing a planarization process to expose a surface of the dummy die.In an embodiment, the portion of the encapsulant in the recess and cutthrough by the blade has a thickness in a range between about 5 μm andabout 600 μm. In an embodiment, when the singulation process isperformed, the first package component is exposed through theencapsulant.

In accordance with some embodiments of the present disclosure, a packageof integrated circuits comprises a first package component; a secondpackage component over and bonded to the first package component; adummy die over and attached to the first package component, wherein thedummy die has a first top surface, and a second top surface lower thanthe first top surface; and an encapsulant encapsulating the dummy dietherein, wherein the encapsulant comprises a first portion overlappingthe second top surface of the dummy die, and the first top surface ofthe dummy die is exposed through the encapsulant. In an embodiment, thesecond top surface extends to an edge of the package. In an embodiment,a sidewall of the package comprises a sidewall of the dummy die. In anembodiment, the encapsulant further comprises a second portion betweenthe dummy die and the first package component. In an embodiment, thepackage further comprises a third package component over and bonded tothe first package component, wherein in a plane view of the package, thedummy die has a lengthwise direction, and wherein: a first straight lineoriginating from a first end of the dummy die and perpendicular to thelengthwise direction crosses the second package component; and a secondstraight line originating from a second end of the dummy die andperpendicular to the lengthwise direction crosses the third packagecomponent.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A method comprising: bonding a second package component to a firstpackage component; bonding a third package component to the firstpackage component; attaching a dummy die to the first package component;encapsulating the second package component, the third package component,and the dummy die in an encapsulant; performing a planarization processto level a top surface of the second package component with a topsurface of the encapsulant, wherein after the planarization process, anupper portion of the encapsulant overlaps the dummy die; andsawing-through the dummy die to separate the dummy die into a firstdummy die portion and a second dummy die portion, wherein the upperportion of the encapsulant is sawed through.
 2. The method of claim 1,wherein the upper portion of the encapsulant has a thickness greaterthan about 5 μm.
 3. The method of claim 1, wherein the second packagecomponent and the third package component are spaced apart from eachother by a space, and wherein the dummy die comprises: a first portionin the space; and second portions on opposite sides of the space.
 4. Themethod of claim 1, wherein at a time the dummy die is sawed through, anentirety of the dummy die is covered by the encapsulant.
 5. The methodof claim 1, wherein at a time the dummy die is sawed through, the dummydie comprises a first top surface that is exposed, and a second topsurface covered by the upper portion of the encapsulant.
 6. The methodof claim 5, wherein after the sawing, in a plane view of the upperportion of the encapsulant, the upper portion of the encapsulant has alength and a width smaller than the length, and wherein the width isgreater than about 50 μm.
 7. The method of claim 1, wherein the dummydie comprises silicon.
 8. The method of claim 1, wherein theplanarization process is performed until the third package component isfurther revealed.
 9. A method comprising: bonding a first packagecomponent to a second package component, wherein the first packagecomponent comprises a device die; attaching a dummy die to the secondpackage component, wherein the dummy die comprises a recess;encapsulating the first package component and the dummy die in anencapsulant, wherein the encapsulant comprises a portion filling therecess; and performing a singulation process using a blade to form apackage, wherein the package comprises the first package component, aportion of the second package component, and a portion of the dummy die,and wherein the blade cuts through the portion of the encapsulant in therecess.
 10. The method of claim 9, wherein the portion of theencapsulant in the recess is cut into two portions.
 11. The method ofclaim 9, wherein the recess is elongated with a lengthwise direction,and the blade cuts along the lengthwise direction.
 12. The method ofclaim 9 further comprising, after the encapsulating and before thesingulation process, performing a planarization process to expose asurface of the dummy die.
 13. The method of claim 9, wherein the portionof the encapsulant in the recess and cut through by the blade has athickness in a range between about 5 μm and about 600 μm.
 14. The methodof claim 9, wherein after the singulation process, the portion of theencapsulant in the recess has a remaining portion in the package, andthe remaining portion of the encapsulant has a width in a range betweenabout 60 μm and about 500 μm.
 15. The method of claim 9, wherein whenthe singulation process is performed, the first package component isexposed through the encapsulant. 16.-20. (canceled)
 21. A methodcomprising: bonding a first package component to a second packagecomponent; attaching a dummy die to the second package component;molding the first package component and the dummy die in a moldingcompound; and performing a die-saw process to form a package, whereinthe package comprises the first package component, a first portion ofthe second package component, and a second portion of the dummy die, andwherein a saw line of the die-saw process passes through an additionalportion of the molding compound and a portion of the dummy die that isdirectly underlying the additional portion of the molding compound. 22.The method of claim 21, wherein the additional portion of the moldingcompound has a first top surface coplanar with a second top surface ofthe dummy die.
 23. The method of claim 21 further comprising, before themolding, recessing the dummy die to form a recess, wherein the moldingcompound is filled into the recess.
 24. The method of claim 23 furthercomprising: after the molding and before the molding, performing aplanarization process to level top surfaces of the molding compound andthe dummy die, wherein the recessing is performed after theplanarization process.
 25. The method of claim 24, wherein in therecessing, the first package component is un-recessed.